Ennostar Partners with Germany’s ALLOS to Commercialize 8-Inch GaN-on-Silicon LED Epitaxial Wafers

Ennostar has announced a strategic partnership with Germany’s ALLOS Semiconductors to commercialize 8-inch gallium nitride on silicon (GaN-on-Si) LED epitaxial wafers, adopting Micro LED technology in augmented reality (AR) and other highly integrated display applications.

Ennostar contributed advanced LED epitaxy manufacturing capabilities, while ALLOS offers leading GaN-on-silicon epitaxial technology. The collaboration marks a milestone in the Micro LED supply chain.

The two companies will co-develop GaN-on-Si LED epitaxial wafers by combining Ennostar’s expertise in LED with ALLOS’s patented buffer-layer technology for GaN-on-silicon. The resulting products can match the brightness and energy efficiency of conventional GaN-on-sapphire LEDs, while scaling wafer sizes to 8 inches, significantly increasing usable area per wafer and improving process efficiency.

The technology also supports ultra-small pixel pitches suited to near-eye, high-resolution displays, and offers strong compatibility with silicon wafer processes and mass-production requirements.

The two companies are working towards highly competitive GaN-on-Si Micro LED solutions to establish a scalable, silicon-fab-compatible manufacturing pathway. Working with ALLOS enables Ennostar to advance 8-inch GaN-on-Si Micro LED epitaxy in parallel, strengthening the value chain and solution set for the rapidly growing Micro LED market.